Patents

The invention relates to a method (10) for detecting distinct target molecules (21) in a sample (26). The method comprises providing (11) a fiber optic sensor (23) functionalized with distinct affinity probes (24) immobilized on a detection surface (25), each probe specifically binding to a corresponding molecule (21) to be detected. The method further comprises providing (12) reagent fluids (26), each comprising an affinity reagent(s) (27) for binding simultaneously with a corresponding probe (24) to the corresponding molecule (21). Each reagent is bound to a metal nanoparticle (28). Each ...

A material layer stack, a non-volatile memory device comprising the stack, and arrays thereof are described. The material layer stack (11; 21; 31) comprises a first and a second magnetic tunnel junction (14, 15) and a first top electrode (13a) formed on a top face (17b) of the stack. A shoulder (18a) is formed on a lateral face of the stack and divides the stack into a lower portion and an upper portion, wherein a tunnel barrier (14b) of the first magnetic tunnel junction is comprised by the lower stack portion and a tunnel barrier (15b) of the second magnetic tunnel junction by the upper ...

The present invent provides a method comprising forming (101) a first wafer (10) comprising a first substrate (11) of a group IV semiconductor, and a group III-V semiconductor device structure (12) formed by selective area epitaxial growth on a surface portion (13a) of a front side (13) of the first substrate (11). The method further comprises forming (102) a second wafer (20) comprising a second substrate (21) of a group IV semiconductor, and a group IV semiconductor device structure (22) formed on a front side (23) of the second substrate (21), and bonding (103) the first wafer (10) to the ...

A method for fabricating an out-of-plane variable overlap MEMS capacitor comprises: providing a substrate (40) comprising a first layer (41), a second layer (42), and a third layer (43) stacked on top of one another; and etching a plurality of first trenches (70) through the third layer (43), through the second layer (42), and into the first layer (41) using a single etching mask. Etching the plurality of first trenches (70) defines a plurality of first fingers (51) in the third layer (43) and a plurality of second fingers (52) in the first layer (41). By using a single mask, the process is ...

The present invention provides a method for fabricating thin crystalline photovoltaic cells, comprising: providing a semiconductor substrate (10); forming a weakening layer (11) in a surface portion of the substrate (10); epitaxially growing a stack of semiconductor layers (20, 30) on the substrate (10) for forming an active layer of the photovoltaic cell, the one semiconductor layers of the stack (20, 30) having a first thermal coefficient of expansion (TCE1); providing on the semiconductor layer or stack of semiconductor layers (20, 30) a patterned contact layer (40, 41, 42) for forming ...

Gasket (G) for sealing an assembly of two tubes (11, 12) each comprising an extremity with a seating surface, the gasket (G) comprising a sealing portion with two opposite faces (21 A, 21 B), each being arranged to contact a respective seating surface, the sealing portion comprising at least a compressible portion (21), characterized in that the gasket (G) comprises an optical fiber (22) comprising a sensing portion at least partially enclosed in the compressible portion (21) and arranged to detect a compression force applied by the tube assembly to the compressible portion (21) via the ...

Gasket (G) for sealing an assembly of two tubes (11, 12) each comprising an extremity with a seating surface, the gasket (G) comprising a sealing portion with two opposite faces (21 A, 21 B), each being arranged to contact a respective seating surface, the sealing portion comprising at least a compressible portion (21), characterized in that the gasket (G) comprises an optical fiber (22) comprising a sensing portion at least partially enclosed in the compressible portion (21) and arranged to detect a compression force applied by the tube assembly to the compressible portion (21) via the ...

A semiconductor cell (20, 31) comprises a memory element (21) for storing a first binary operand, which memory element (21) provides complementary memory outputs (Q, Qbar), and a multiplication block (22) that is locally and uniquely associated with the memory element (21), the multiplication block (22) being configured for receiving complementary input signals (X, Xbar) representing binary input data and the complementary memory outputs (Q, Qbar) of the associated memory element (21) representing the first binary operand, and for implementing a multiplication operation on these signals, and ...

The present invention provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack (24) comprising a layer of channel material (34) with on top thereof a layer of sacrificial material (21), removing material from the stack (24) so as to form at least one nanowire (30) from the layer of channel material (34) and the layer of sacrificial material (21), and replacing the sacrificial material (21) in the at least one nanowire (30) by heterojunction material (41, 52). A method according to embodiments ...

Device (1) for multi-dimensional liquid analysis, such as chromatography. The device comprises a first analysis channel (3) and one or more second analysis channels (5). The first analysis channel comprises a channel wall (21) with outlets (11) connecting the first analysis channel to one of the plurality of second analysis channels, and a valve (7) for opening or closing at least one of the one or more outlets (11) .