Publications
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Ab initio simulations of 2D materials, interfaces and devices for beyond CMOS applications KU Leuven
The growing needs of the semiconductor industry are pushing Silicon based transistor devices to their ultimate limits. As scaling continues, novel device concepts are being explored to improve performances and increase transistor densities. One such concept is the Tunnel Field Effect Transistor (TFET), which has been shown to alleviate the power consumption issue and offer steep subthreshold slopes. However, improving device performances not ...
Ab initio simulations of novel 2D materials and interfaces for advanced ICT applications ,, KU Leuven
To continue the development and miniaturization of transistors, new materials and device concepts are required to be developed. This thesis provides a study of two new classes of materials, superlattices and two-dimensional (2D) materials, to assess their potential as a replacement for silicon in the transistor channel. To perform this analysis, modern modeling techniques are used to provide an atomistic description (molecular dynamics, ...
A systematic study of various 2D materials in the light of defect formation and oxidation KU Leuven University of Antwerp
The thermodynamic aspects of various 2D materials are explored using Density Functional Theory (DFT). Various metal chalcogenides (MX2, M = metal, chalcogen X = S, Se, Te) are investigated with respect to their interaction and stability under different ambient conditions met in the integration process of a transistor device. Their interaction with high-κ dielectrics is also addressed, in order to assess their possible integration in ...
Hole-doping induced ferromagnetism in 2D materials Interuniversity Microelectronics Centre KU Leuven
Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. Hereby, high-throughput first-principles simulations are performed to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequently performed to identify alternative possible ...
A perspective on the state-of-the-art functionalized 2D materials University of Antwerp
Two-dimensional (2D) ultra-thin materials are more crucial than their bulk counterparts for the covalent functionalization of their surface owing to atomic thinness, large surface-to-volume ratio, and high reactivity of surface atoms having unoccupied orbitals. Since the surface of a 2D material is composed of atoms having unoccupied orbitals, covalent functionalization enables one to improve or precisely modify the properties of the ultra-thin ...
Picometer-precision few-tilt ptychotomography of 2D materials University of Antwerp
From ripples to defects, edges and grain boundaries, the 3D atomic structure of 2D materials is critical to their properties. However the damage inflicted by conventional 3D analysis precludes its use with fragile 2D materials, particularly for the analysis of local defects. Here we dramatically increase the potential for precise local 3D atomic structure analysis of 2D materials, with both greatly improved dose efficiency and sensitivity to ...
Chemistry and plasma physics challenges for 2D materials technology KU Leuven
Transition-metal dichalcogenides such as MoS2 or WS2 are semiconducting materials with a layered structure. One single layer consists of a plane of metal atoms terminated on the top and bottom by the chalcogen atoms sulfur, selenium, or tellurium. These layers show strong in-plane covalent bonding, whereas the Van-der-Waals bonds in between adjacent layers are weak. Those weak bonds allow the microcleavage and extraction of a monolayer. ...
Heterojunction Tunnel FETS using 2D Materials as Channel KU Leuven
2D materials research has been shifting towards novel electronic and optical applications apart from conventional MOSFETs. Their atomically flat surfaces and self-passivated layers offer potentially defect free inter-layer tunneling. Band-to-band tunneling field effect transistors (TFET) have caught the attention of industry and academia for over a decade in CMOS scaling with the promise of obtaining a steep Subthreshold Swing, SS < 60mV/dec ...
2D Materials for Nanoelectronics KU Leuven
© 2016 by Taylor & Francis Group, LLC. All rights reserved. Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices. Comprised of chapters authored by ...