Projects
SRP (Groeiers): Construction history Vrije Universiteit Brussel
The quest for the ground state of two-dimensional III-V semiconductors. University of Antwerp
Atomic assessment of paramagnetic defects in 2-dimensional semiconductor layers: MoS2 KU Leuven
For decades, the semiconductor industry has pursued the extensive miniaturization of the transistor. Conventional Si-based devices are however reaching their scaling limits since undesired ‘physics’ effects arise when Si-based transistors are ultra-scaled. A possible solution to overcome these electrostatic control issues and lithography challenges is to incorporate novel 2D materials in future nanoelectronic devices. In this regard, TMDs, ...
Gaining control over the deposition and single-crystal growth of lowdimensional hybrid perovskites to determine structure-property relationships for optoelectronic applications Hasselt University
Mixed Dimensional Hybrid Heterostructures KU Leuven
Magnetism of two-dimensional electron systems modified by ion implantation KU Leuven
The Structural Behaviour of Corroded Reinforced Concrete Beams: Experimental and Numerical Studies for the Assessment of Corrosion-damaged Reinforced Concrete Beams KU Leuven
Assessing the structural performance of reinforced concrete (RC) structures damaged by chloride-induced corrosion is an important research topic with a high societal impact. Different models exist in the literature to predict the flexural capacity of corroded RC beams. These models incorporate corrosion damage according to damage relations calibrated on a specific set of data. The variety of approaches and relations in incorporating pitting ...
Impact of external factors on band alignment of TMDs with SiO2: WS2 versus WSe2 and MoS2 KU Leuven
Over the past 50 years Si based integrated circuits have been downscaling tremendously to create faster logic chips and high-volume memory circuits. Such scaling required significant technological advances and innovative designs. Unfortunately, as transistor channel lengths have been approaching 10 nm, it became clear that such aggressive scaling would not be sustainable for Si based transistors. In looking for solutions one addresses more ...