Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS₂ monolayers on sapphire substrates KU Leuven
This paper quantitatively assessed the intrinsic defectivity of as-deposited molybdenum disulfide (MoS₂) monolayers on sapphire substrates using atomically resolved scanning tunneling microscopy and spectroscopy. We observed two types of point defects — protrusion-like and depression-like with average densities of (2.4 ± 2) · 10¹³ cm¯² and (1.9 ± 1.4) · 10¹² cm¯², respectively. The position of the electron state within the MoS₂ bandgap suggests ...