Publications

© 2016 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + ...

© 2016 AIP Publishing LLC. We report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si1-xGex alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with the In atomic environment determined by X-ray absorption spectroscopy, we observed the transition from electrically active, substitutional In at low In concentration to ...

The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe4) at low In concentration (≤ 2 at. %), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe3) at concentration ≥ 0.6 at. %. This behaviour can be ...

© 2015 AIP Publishing LLC. We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 ...

Single crystalline GexSn1-x (GeSn) alloys are promising for electronic and optical applications [1]. GeSn has been predicted to exhibit carrier mobilities exceeding that of Ge [2], which makes this material suitable as channel material for high-speed complementary metal-oxide semiconductor (CMOS) technology [3]. In addition to increased carrier mobility, the GeSn material system is interesting for its optical properties. GeSn exhibits a direct ...

The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy ...

The lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO were studied by means of the electron emission channeling method following the implantation of radioactive As-73 and Sb-124 isotopes. The majority of the implanted As and Sb probe atoms was found to occupy substitutional Zn sites, with the possible fraction on substitutional O sites being at maximum a few percent. The obtained results illustrate ...

We present an experimental study of structural lattice damage in Ge induced by ion implantation. From the strain and disorder profiles, calculated from x-ray diffraction and ion channelling experiments we have investigated the defect accumulation as a function of ion fluence, mass, energy and current density as well as the damage recovery and recrystallization of the implanted region upon annealing. The damage accumulation process can be divided ...

In deze doctoraatsthesis hebben we twee belangrijke implantatie-gerelate erde onderwerpen onderzocht in germanium: (1) de geïnduceerde structurel e en elektrische roosterschade na implantatie en (2) de roosterplaats va n geïmplanteerde onzuiverheden. Vooreerst hebben we de structurele roost erschade na ionenimplantatie in Ge gekarakteriseerd aan de hand van de r oostervervorming en de defectfractie in functie van verschillende implan ...

The lattice location of ion implanted antimony in zinc oxide has been determined by means of beta(-) emission channeling from the radioactive Sb-124 isotope. Following 30 keV implantation of Sb-124 into a single-crystalline ZnO sample to a fluence of 1x10(14) cm(-2), the angular-dependent emission rate of beta(-) particles around several crystallographic directions was measured with a position-sensitive Si detector. The majority of Sb was found ...