Publications

1 - 10 of 2182 results

Search term:

Study of the interfacial reactions controlling the spreading of Al on Ni KU Leuven

Youqing Sun, Ensieh Yousefi, anil Kunwar, Nele Moelans, David Seveno, muxing Guo
Despite the importance in high-temperature processing, wettability studies focusing on liquid aluminum (Al) on solid nickel (Ni) at high temperatures are scarce due to the difficulty of performing experiments and the complexity of interfacial physical and chemical activities. The effects of interrelated multi-factors, including intermetallic compounds (IMCs) formation and diffusion on wetting dynamics is still debatable. Therefore, in this ...

Experimental and computational insights into the aminopropylphosphonic acid modification of mesoporous TiO2 powder Vrije Universiteit Brussel Hasselt University

Nick Gys, Laurens Siemons, Bram Pawlak, Kenny Wyns, Kitty Baert, Tom Hauffman, No name available, Frank Blockhuys, Bart Michielsen, Steven Mullens, et al.

Recently, interest has been directed towards the grafting of metal oxides with organophosphonic acids bearing terminal amine groups to extend the functionality and applicability of these materials. Previous reports mainly focus on the application perspective, while a detailed characterization of the surface properties at the molecular level and the correlation with the synthesis conditions are missing. In this work, mesoporous TiO2 powder is ...

Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C Vrije Universiteit Brussel

P. G.D. Agopian, G. J. Carmo, Jonathan Martino, Eddy Simoen, U. Peralagu, Bertrand Parvais, N. Waldron, N. Collaert

In this work, the DC behavior of AlGaN/GaN Metal-Insulator-Semiconductor high electron mobility transistors (MO(I)SHEMTs) with two different gate dielectrics (Al2O3 and Si3N4) is analyzed through the experimental comparison of their basic and analog parameters. The transistors with Si3N4 insulator are more closely related to the normally-off devices (less negative threshold voltage) and less affected by the short channel effects (better DIBL ...

Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications Vrije Universiteit Brussel

Sumreti Gupta, Aarti Rathi, Bertrand Parvais, Abhisek Dixit

CMOS circuits for Quantum Computing applications require FETs operating at cryogenic temperatures. In this work, we aim to present one of the first insights on the ability of the industry standard compact model BSIMCMG in capturing low temperature device physics. We have performed wafer-level DC-IV measurements on multi-fin n- channel bulk FinFETs with 3–4 nm wide fins and down to 20 nm designed gate length across a range of temperatures ...

Effect of hydrogen peroxide on bovine serum albumin adsorption on Ti6Al4V alloy Vrije Universiteit Brussel

Ehsan Rahimi, Ruben Offoiach, Saman Hosseinpour, Ali Davoodi, Kitty Baert, Alexander Lutz, Herman Terryn, Maria Lekka, Lorenzo Fedrizzi

Protein adsorption on the surface of implant materials greatly affects the performance of the implants, such as their stability as well as the release of metal ions from and the adhesion of cells to their surface. In addition, the production of extracellular H2O2 from the activation of inflammatory cells could interfere with protein–metal interactions and/or modify the conformation of adsorbed proteins. In this study, we utilised scanning ...

Breakdown of Universal Scaling for Nanometer-Sized Bubbles in Graphene KU Leuven

Renan Villarreal De La Fuente, Pin-Cheng Lin, Fahim Faraji, Nasim Hassani, Harsh Vardhan Bana, Zviadi Zarkua, Maya N Nair, Hung-Chieh Tsai, Manuel Auge, Felix Junge, et al.
We report the formation of nanobubbles on graphene with a radius of the order of 1 nm, using ultralow energy implantation of noble gas ions (He, Ne, Ar) into graphene grown on a Pt(111) surface. We show that the universal scaling of the aspect ratio, which has previously been established for larger bubbles, breaks down when the bubble radius approaches 1 nm, resulting in much larger aspect ratios. Moreover, we observe that the bubble stability ...

Friction factor for steady periodically developed flow in micro- and mini-channels with arrays of offset strip fins KU Leuven

Arthur Vangeffelen, Geert Buckinx, Maria Rosaria Vetrano, Martine Baelmans
In this work, the friction factor for steady periodically developed flow through micro- and mini-channels with periodic arrays of offset strip fins is analyzed. The friction factor is studied numerically on a unit cell of the array for Reynolds numbers ranging from 1 to 600, and fin height-to-length ratios below 1. It is shown that the friction factor correlations from the literature, which primarily focus on larger conventional offset strip fin ...

Nanobody-aided crystallization of the transcription regulator PaaR2 from Escherichia coli O157:H7 Vrije Universiteit Brussel

Pieter De Bruyn, Marusa Prolic Kalinsek, Alexandra Vandervelde, Yann Sterckx, Frank Sobott, San Hadzi, Els Pardon, Jan Steyaert, Remy Loris
paaR2-paaA2-parE2 is a three-component toxin-antitoxin module found in prophage CP-993P of Escherichia coli O157:H7. Transcription regulation of this module occurs via the 123 amino acid regulator PaaR2 which forms a large oligomeric structure. Despite appearing to be well-folded, PaaR2 as well as its N-terminal DNA binding domain withstand crystallization. Native mass spectrometry was used to screen for nanobodies that form a unique complex and ...

Crystal structure, Hirshfeld surface analysis and density functional theory study of 1-nonyl-3-phenylquinoxaim-2-one KU Leuven

Nadeem Abad, Karim Chkirate, Fares Hezam Al-Ostoot, Luc Van Meervelt, Sanae Lahmidi, Souad Ferfra, Youssef Ramli, El Mokhtar Essassi
In the title mol-ecule, C23H28N2O, the phenyl ring is inclined to the quinoxaline ring system at a dihedral angle of 20.40 (9)°. In the crystal, C-H⋯O inter-actions between neighbouring mol-ecules form chains along the a-axis direction. Hirshfeld surface analysis indicates that the most important contributions to the crystal packing are from H⋯H (70.6%), H⋯C/C⋯H (15.5%) and H⋯O/O⋯H (4.6%) inter-actions. The optimized structure calculated using ...