Reliability Characterization of Gate-stacks for III-V Channel MOSFETs KU Leuven
The continuous scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dimensions for over more than 5 decades has enabled the steady increase of transistor performance and density, while reducing the relative cost. These factors led to a tremendous growth of the semiconductor industry and it is remarkable that Silicon has always been the preferred channel material.
The journey of scaling Si-channel-based MOSFETs was ...