Title Participants Abstract "Volatile Heterobimetallic Complexes from Pd-II and Cu-II beta-Diketonates: Structure, Magnetic Anisotropy, and Thermal Properties Related to the Chemical Vapor Deposition of Cu-Pd Thin Films" "Vladislav V Krisyuk, Iraida A Baidina, Asiya E Turgambaeva, Vladimir A Nadolinny, Svetlana G Kozlova, Ilya V Korolkov, Thomas Duguet, Constantin Vahlas, Igor K Igumenov" "Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A novel approach for preparing volatile heterometallic complexes for use as precursors for the chemical vapor deposition of various materials is reported. New CuPd complexes based on β-diketonate units were prepared, and their structures and compositions were determined. [PdL2∗CuL2] (1) and [PdL2∗Cu(tmhd)2] (2) (L=2-methoxy-2,6,6-trimethylheptane-3,5-dionate; tmhd=2,2,6,6- tetramethylheptane-3,5-dionate) are 1D coordination polymers with alternating metal complexes, which are connected through weak interactions between the Cu atoms and the OCH3 groups from the ligand of the Pd complexes. The volatility and thermal stability were studied using thermogravimetric and differential thermal analyses and mass spectrometry. Compound 1 vaporizes without decomposition into monometallic complexes. It exhibits magnetic anisotropy, which was revealed from the angular variations in the EPR spectrum of a single crystal. The vapor thermolysis process for 1 was investigated using mass spectrometry, allowing the process to be framed within the temperature range of 200-350C. The experimental data, supported by QTAIM calculations of the allowed intermolecular interactions, suggest that 1 likely exists in the gas phase as bimetallic molecules. Compound 1 proved to be suitable as a single-source precursor for the efficient preparation of CuPd alloy films with tunable Cu/Pd ratio. A possible mechanism for the film growth is proposed based on the reported data. Making a chain: Linking metal β-diketonates to form a heterometallic linear coordination polymer resulted in the convenient, scalable synthesis of a new family of volatile heterometallic compounds. Their properties are tuned by the rational design of the ligand structure and matching of central atoms. A CuPd complex of this type (see figure) is volatile and can be a promising precursor for bimetallic alloy films prepared by chemical vapor deposition." "Chemical vapour deposition of Si:C and Si:C:P films – evaluation of material quality as a function of C content, carrier gas and doping" "Sathish Kumar Dhayalan, Wilfried Vandervorst" "© 2015 Elsevier B.V. Abstract Incorporation of source-drain stressors (S/D) for FinFETs to boost the channel mobility is a promising scaling approach. Typically SiGe:B S/D stressors are used for p FinFETs and Si:C:P S/D stressors for n FinFETs. The deposition of such Si:C:P S/D stressors requires a low thermal budget to freeze the C in substitutional sites and also to avoid problems associated with surface reflow of Si fins. In this work, we report the material properties of Si:C and Si:C:P epitaxial layers grown by chemical vapor deposition, in terms of their defectivity and C incorporation as a function of different process conditions. The undoped Si:C layers were found to be defect free for total C contents below 1%. Above this concentration defects were incorporated and the defect density increased with increasing C content. Abrupt epitaxial breakdown occurred beyond a total C content of 2.3% resulting in amorphous layers. P doping of Si:C layers brought down the resistivity and also thicker Si:C:P films underwent epitaxial breakdown. Additionally, the use of nitrogen instead of hydrogen as carrier gas resulted in an increase of the growth rate and substitutional C incorporation both by a factor of two, while the surface defect density reduced." "Deposition of thin films using an atmospheric pressure direct current plasma jet" "Xiaolong Deng, Anton Nikiforov, Christophe Leys" "Silicon-containing thin films are applied in various different fields, such as packaging, biomedical devices and optical components. Coatings deposited using plasma-enhanced chemical vapor deposition (PECVD) techniques attract many interests due to their economic and ecological advantages. Plasma deposited films are generally amorphous, insoluble, highly cross-linked, highly resistant to heat and corrosion and very adhesive to different substrates. Several atmospheric pressure plasma sources have been researched for thin film deposition. Compared to plasma sources that limit the plasma region between electrodes (inter-electrode distance: a few millimeters), plasma jets possess the characteristics of spatial separation between plasma region and processing region. Due to the fact that a DC discharge at atmospheric pressure inclines to transfer from a glow discharge to an arc, the DC plasma jet has attracted relatively little attention in the deposition of silicon-containing films. In this work, an atmospheric pressure direct current (DC) plasma jet for thin films deposition is investigated. By continual removal of heat from the active plasma region using a gas flow and by stabilizing the glow-to-arc transformation using ballast resistors, the atmospheric pressure DC plasma jet can work in a non-equilibrium state which is demonstrated from the gas temperature and the vibrational temperature of the nitrogen jet. The thin films are deposited using the plasma jet with tetramethyldisiloxane (TMDSO) as precursor. The effect of O2 flow and plasma discharge power on film deposition rate and film chemical characteristics is investigated in detail by surface profilometry, FTIR and XPS." "Fluorine doped $Fe_{2}O_{3}$ nanostructures by a one-pot plasma-assisted strategy" "G. Carraro, A. Gasparotto, C. Maccato, E. Bontempi, Oleg Lebedev, Stuart Turner, C. Sada, L.E. Depero, Staf Van Tendeloo, D. Barreca" "The present work reports on the synthesis of fluorine doped Fe2O3 nanomaterials by a single-step plasma enhanced-chemical vapor deposition (PE-CVD) strategy. In particular, Fe(hfa)2TMEDA (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; TMEDA = N,N,N′,N′-tetramethylethylenediamine) was used as molecular source for both Fe and F in Ar/O2 plasmas. The structure, morphology and chemical composition of the synthesized nanosystems were thoroughly analyzed by two-dimensional X-ray diffraction (XRD2), field emission-scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A suitable choice of processing parameters enabled the selective formation of α-Fe2O3 nanomaterials, characterized by an homogeneous F doping, even at 100 °C. Interestingly, a simultaneous control of the system nanoscale organization and fluorine content could be achieved by varying the sole growth temperature. The tailored properties of the resulting materials can be favourably exploited for several technological applications, ranging from photocatalysis, to photoelectrochemical cells and gas sensing."