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Researcher
Wilfried Vandervorst
- Disciplines:Applied mathematics in specific fields, Condensed matter physics and nanophysics, Atomic and molecular physics, Geophysics, Physical geography and environmental geoscience, Other earth sciences, Aquatic sciences, challenges and pollution, Geomatic engineering
Affiliations
- Quantum Solid State Physics (QSP) (Division)
Member
From1 Aug 2019 → Today - Nuclear and Radiation Physics (Division)
Member
From1 Oct 2007 → 31 Jul 2019 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 30 Sep 2007
Projects
1 - 10 of 34
- High lateral and depth resolution ion beam analysis of laterally confined nanostructuresFrom2 Sep 2019 → TodayFunding: FWO Strategic Basic Research Grant
- Self-focusing SIMS with in-situ SPM: a paradigm shift in 3D-metrologyFrom12 Oct 2018 → 13 May 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Atom-by-atom analysis of advanced semiconductor devices: unraveling the physics of atom probe tomographyFrom20 Aug 2018 → 22 May 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Nano-focused Raman spectroscopy for stress and compositional metrologyFrom31 Jul 2018 → 31 Jul 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Laser-assisted atom probe tomography of oxide materials: Field evaporation mechanism study and performance improvementFrom15 May 2018 → 18 Dec 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic scale synthesis and atomic scale characterization of complex oxides with electronic/ionic conductivityFrom1 Jan 2018 → 31 Dec 2021Funding: FWO research project (including WEAVE projects)
- Metrology and physical mechanisms of 2D transition metal dichalcogenides and devices.From6 Nov 2017 → 31 Jan 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Towards improved atom probe tomography analysis of semiconductors : unraveling the dynamic evolution of the semiconductor emitterFrom1 Sep 2017 → 31 Dec 2021Funding: FWO Strategic Basic Research Grant
- Fabrication and characterization of reference nano and micro structures for 3D chemical analysisFrom8 Feb 2017 → 8 Jul 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Advanced methodology for the in-line electrical characterization of doped semiconductors in confined volumes.From1 Nov 2016 → 29 Aug 2023Funding: FWO Strategic Basic Research Grant
Publications
31 - 40 of 482
- Carrier profiling with fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP(2019)
Authors: Wilfried Vandervorst
- Atomic scale observation of atom distributions in 3D devices using atom probe tomography(2019)
Authors: Davit Melkonyan, Wilfried Vandervorst
- Effects of buried grain boundaries in multilayer MoS2(2019)
Authors: Marco Mascaro, Wilfried Vandervorst
- Fabrication and characterization of reference nano and micro structures for 3D chemical analysis(2019)
Authors: Masoud Dialameh, Wilfried Vandervorst
- Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation(2019)
Authors: Anurag Vohra, Wilfried Vandervorst
- Self-focusing SIMS: A metrology solution to area selective deposition(2019)
Authors: Wilfried Vandervorst
Pages: 594 - 599 - Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers(2019)
Authors: Wilfried Vandervorst
Pages: P209 - P216 - Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment(2019)
Authors: Anurag Vohra, Wilfried Vandervorst
- Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature(2019)
Authors: Benjamin Groven, Wilfried Vandervorst, Marc Heyns, Iuliana Radu, Annelies Delabie
- Thermodynamic modelling of InAs/InP(001) growth towards quantum dots formation by metalorganic vapor phase epitaxy(2019)
Authors: Samiul Hasan, Clement Merckling, Johan Meersschaut, Wilfried Vandervorst
Pages: 133 - 140
Patents
1 - 10 of 10
- A method and apparatus for aligning a probe for scanning probe microscopy to the tip of a pointed sample (Inventor)
- Device for measuring surface characteristics of a material (Inventor)
- Characterization of regions with different crystallinity in materials (Inventor)
- Method for determining the shape of a sample tip for atom probe tomography (Inventor)
- A device for measuring surface characteristics of a material (Inventor)
- A method and apparatus for transmission for transmission electron (Inventor)
- A method and apparatus for aligning a probe for scanning probe microscopy to the tip of a pointed sample (Inventor)
- Method and apparatus for transmission electron microscopy (Inventor)
- A device and method for two dimensional active carrier profiling of semiconductor components (Inventor)
- A method and apparatus for transmission electron microscopy (Inventor)