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Researcher
Wilfried Vandervorst
- Disciplines:Applied mathematics in specific fields, Condensed matter physics and nanophysics, Atomic and molecular physics, Geophysics, Physical geography and environmental geoscience, Other earth sciences, Aquatic sciences, challenges and pollution, Geomatic engineering
Affiliations
- Quantum Solid State Physics (QSP) (Division)
Member
From1 Aug 2019 → Today - Nuclear and Radiation Physics (Division)
Member
From1 Oct 2007 → 31 Jul 2019 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 30 Sep 2007
Projects
1 - 10 of 34
- High lateral and depth resolution ion beam analysis of laterally confined nanostructuresFrom2 Sep 2019 → TodayFunding: FWO Strategic Basic Research Grant
- Self-focusing SIMS with in-situ SPM: a paradigm shift in 3D-metrologyFrom12 Oct 2018 → 13 May 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Atom-by-atom analysis of advanced semiconductor devices: unraveling the physics of atom probe tomographyFrom20 Aug 2018 → 22 May 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Nano-focused Raman spectroscopy for stress and compositional metrologyFrom31 Jul 2018 → 31 Jul 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Laser-assisted atom probe tomography of oxide materials: Field evaporation mechanism study and performance improvementFrom15 May 2018 → 18 Dec 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic scale synthesis and atomic scale characterization of complex oxides with electronic/ionic conductivityFrom1 Jan 2018 → 31 Dec 2021Funding: FWO research project (including WEAVE projects)
- Metrology and physical mechanisms of 2D transition metal dichalcogenides and devices.From6 Nov 2017 → 31 Jan 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Towards improved atom probe tomography analysis of semiconductors : unraveling the dynamic evolution of the semiconductor emitterFrom1 Sep 2017 → 31 Dec 2021Funding: FWO Strategic Basic Research Grant
- Fabrication and characterization of reference nano and micro structures for 3D chemical analysisFrom8 Feb 2017 → 8 Jul 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Advanced methodology for the in-line electrical characterization of doped semiconductors in confined volumes.From1 Nov 2016 → 29 Aug 2023Funding: FWO Strategic Basic Research Grant
Publications
11 - 20 of 482
- Apparent size effects on dopant activation in nanometer-wide Si fins(2021)
Authors: Steven Folkersma, Wilfried Vandervorst
- Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission(2021)
Authors: Clement Merckling, Wilfried Vandervorst
- Surface analysis in the semiconductor industry: Present use and future possibilities(2020)
Authors: Wilfried Vandervorst
Pages: 786 - 791 - Unravelling stacking order in epitaxial bilayer MX2using 4D-STEM with unsupervised learning(2020)
Authors: Wilfried Vandervorst
- The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements(2020)
Authors: Komal Pandey, Wilfried Vandervorst
- A Correlative ToF-SIMS/SPM Methodology for Probing 3D Devices(2020)
Authors: Claudia Fleischmann, Wilfried Vandervorst
Pages: 11413 - 11419 - Critical dimension metrology using Raman spectroscopy(2020)
Authors: Andrzej Gawlik, Wilfried Vandervorst
- Understanding the effect of confinement in scanning spreading resistance microscopy measurements(2020)
Authors: Komal Pandey, Wilfried Vandervorst
- A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1-xSnx(2020)
Authors: Anurag Vohra, Wilfried Vandervorst
- Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx(2020)
Authors: Anurag Vohra, Wilfried Vandervorst
Patents
1 - 10 of 10
- A method and apparatus for aligning a probe for scanning probe microscopy to the tip of a pointed sample (Inventor)
- Device for measuring surface characteristics of a material (Inventor)
- Characterization of regions with different crystallinity in materials (Inventor)
- Method for determining the shape of a sample tip for atom probe tomography (Inventor)
- A device for measuring surface characteristics of a material (Inventor)
- A method and apparatus for transmission for transmission electron (Inventor)
- A method and apparatus for aligning a probe for scanning probe microscopy to the tip of a pointed sample (Inventor)
- Method and apparatus for transmission electron microscopy (Inventor)
- A device and method for two dimensional active carrier profiling of semiconductor components (Inventor)
- A method and apparatus for transmission electron microscopy (Inventor)