Researcher
Sijia Jiang
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → 29 Feb 2016 - Surface and Interface Engineered Materials (Division)
Member
From1 Jan 2012 → 29 Feb 2016 - Department of Materials Engineering (Department)
Member
From12 Oct 2009 → 31 Dec 2011
Publications
1 - 10 of 14
- Selective Area Growth of III/V Compounds on Si Substrates using Metal-organic Vapor Phase Epitaxy(2015)
Authors: Sijia Jiang, Marc Heyns, Marc Seefeldt
Number of pages: 228 - Nucleation behavior of III/V crystal selectively grown inside nano-scale trenches: The influence of trench width(2015)
Authors: Sijia Jiang, Clement Merckling, Wilfried Vandervorst, Marc Seefeldt, Marc Heyns
Pages: N83 - N87 - First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping(2014)
Authors: Niamh Waldron, Sijia Jiang
Pages: 111 - 123 - Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostrucures on Si for advanced CMOS devices(2014)
Authors: Clement Merckling, Niamh Waldron, Sijia Jiang, Marc Heyns, Wilfried Vandervorst
Pages: 107 - 112 - Growth rate for the selective epitaxial growth of III-V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments(2014)
Authors: Sijia Jiang, Clement Merckling, Niamh Waldron, Wilfried Vandervorst, Marc Seefeldt, Marc Heyns
Pages: 59 - 63 - Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate(2014)
Authors: Sijia Jiang, Clement Merckling, Niamh Waldron, Wilfried Vandervorst, Marc Seefeldt, Marc Heyns
Pages: 501 - 511 - Evolution of (001) and (111) facets for selective epitaxial growth inside submicron trenches(2014)
Authors: Sijia Jiang, Clement Merckling, Niamh Waldron, Wilfried Vandervorst, Marc Seefeldt, Marc Heyns
Pages: 1 - 7 - Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering(2014)
Authors: Clement Merckling, Niamh Waldron, Sijia Jiang, Marc Heyns, Wilfried Vandervorst
Pages: 023710 - 1 - Optical and structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy(2013)
Authors: Liyang Zhang, Ruben Lieten, Sijia Jiang, Gustaaf Borghs
Pages: 10590 - 10596 - Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique(2013)
Authors: Clement Merckling, Niamh Waldron, Sijia Jiang, Marc Heyns, Wilfried Vandervorst
Pages: 33708 - 1