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Researcher
Po-Chun Hsu
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → 28 Feb 2022 - Surface and Interface Engineered Materials (Division)
Member
From17 Sep 2016 → 31 Jul 2020
Projects
1 - 1 of 1
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs SystemFrom23 Aug 2017 → 11 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 21
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs System(2022)
Authors: Po-Chun Hsu, Marc Heyns
- Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy(2021)
Authors: Po-Chun Hsu
- Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy(2021)
Authors: Po-Chun Hsu, Stefan De Gendt
- Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration(2020)
Authors: Po-Chun Hsu
Pages: 4827 - 4833 - Polarization Control of Epitaxial Barium Titanate (BaTiO3) Grown by Pulsed-Laser Deposition on a MBE-SrTiO3/Si(001) Pseudo-Substrate(2020)
Authors: Tsang-Hsuan Wang, Po-Chun Hsu, Jan Genoe, Clement Merckling
Pages: 104104 - 104104 - A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1-x-based Layers for Ovonic Threshold Switching Selectors(2020)
Authors: Po-Chun Hsu, Andre Stesmans
- Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers(2020)
Authors: Po-Chun Hsu, Clement Merckling, Marc Heyns
- Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers (vol 9, 033001, 2020)(2020)
Authors: C Claeys, Po-Chun Hsu, Y Mols, H Han, H Bender, F Seidel, P Carolan, Clement Merckling, A Alian, N Waldron, et al.
- The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As(2019)
Authors: Po-Chun Hsu, Clement Merckling, Marc Heyns
- Au-induced improvements in the grain stability and mechanical properties of Ag-based alloy wires under electrical current stressing(2019)
Authors: Po-Chun Hsu
Pages: 15897 - 15911