Researcher
Marc Heyns
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → Today - Surface and Interface Engineered Materials (Division)
Member
From1 Jan 2012 → 31 Jul 2020 - Department of Materials Engineering (Department)
Member
From1 Oct 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 2005 → 30 Sep 2007
Projects
1 - 10 of 28
- OPERANDO: In-situ observations of the dynamic processes inside the atomic resolution transmission electron microscopeFrom1 May 2020 → TodayFunding: FWO Medium Size Research Infrastructure
- Magnetoacoustic wave devices for ultralow power spintronicsFrom19 Jun 2019 → TodayFunding: FWO Strategic Basic Research Grant
- 2D Materials: Theoretical study of Magnetic and Contact propertiesFrom7 Dec 2018 → 20 Oct 2023Funding: Own budget, for example: patrimony, inscription fees, gifts
- Micromagnetic simulations for boolean and non-boolean logicFrom1 Sep 2018 → 31 Dec 2022Funding: FWO Strategic Basic Research Grant
- Interface Engineering for Performance Enhancement in 2D Field Effect TransistorsFrom3 Aug 2018 → 14 Mar 2024Funding: Own budget, for example: patrimony, inscription fees, gifts
- Understanding Interface Interactions in Graphene-Ruthenium Hybrids for Next Generation InterconnectsFrom6 Nov 2017 → 12 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Design and Characterization of Quantum Sillicon-Based Devices for Semiconducting Qubit Implementation.From1 Oct 2017 → 31 Mar 2022Funding: FWO Strategic Basic Research Grant
- Fundamental challenges for two dimensional semiconductorsFrom1 Oct 2017 → 30 Sep 2021Funding: Fund Recuperation Fiscal Exemption
- Design and Characterization of Quantum Devices for Superconducting Qubit ImplementationFrom20 Sep 2017 → 19 Aug 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs SystemFrom23 Aug 2017 → 11 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
501 - 510 of 534
- SiGe band-to-band tunneling calibration based on p-i-n diodes: fabrication, measurement and simulation
Authors: Anne Verhulst, Kristin De Meyer, Marc Heyns
Pages: 965 - 970 - Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
Authors: Clement Merckling, Marc Heyns
- HfO2 atomic layer deposition using HfCl4/H2O: the first reaction cycle
Authors: Annelies Delabie, Marc Heyns, Chris Vinckier, Stefan De Gendt
Pages: 257 - 267 - Silicon orientation effects in the atomic layer deposition of Hafnium oxide
Authors: Laura Nyns, Annelies Delabie, Marc Heyns, Chris Vinckier, Stefan De Gendt
Pages: G9 - G12 - Integration of Carbon Nanotubes as Future Interconnections for Sub-32 nm Technologies (Integratie van koolstof nanobuisjes als toekomstige interconnecties voor sub-32 nm technologie)
Authors: Guido Groeseneken, Marc Heyns
Number of pages: 240 - Trapping in 1nm EOT high-k / MG
Authors: Marc Heyns, Stefan De Gendt
Pages: 77 - 84 - HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle
Authors: Laura Nyns, Annelies Delabie, Marc Heyns, Chris Vinckier, Stefan De Gendt
Pages: G269 - G273 - Deposition processes for the fabrication of epitaxial Si-O superlattices
Authors: Annelies Delabie, Johan Meersschaut, Wilfried Vandervorst, Marc Heyns
Pages: 33 - 34 - Seedless templated growth of hetero-nanostructures for novel microelectronics devices
Authors: Francesca Iacopi, Rita Rooyackers, Roger Loo, Wendy Vanherle, Alexey Milenin, Kai Arstila, Anne Verhulst, Shotaro Takeuchi, Hugo Bender, Matty Caymax, et al.
Pages: 1178 - Influence of gas type on ultrasound cleaning efficiency
Authors: Steven Brems, Marc Hauptmann, Elisabeth Camerotto, Marc Heyns, Stefan De Gendt
Pages: 625 - 628
Patents
1 - 7 of 7
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)
- A bilayer graphene tunneling field effect transistor (Inventor)
- Bilayer graphene tunneling field effect transistor (Inventor)
- Graphene-based semiconductor device (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)