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Researcher
Hao Yu
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 15 Feb 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Sep 2013 → 31 Jul 2020
Publications
1 - 10 of 27
- Interpersonal and Intrapersonal Variabilities in Daily Activity-Travel Patterns: A Networked Spatiotemporal Analysis(2021)
Authors: Hao Yu
- Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts(2019)
Authors: Hao Yu
Pages: 1712 - 1715 - Quantifying Farmers' Initiatives and Capacity to Cope with Drought: A Case Study of Xinghe County in Semi-Arid China(2019)
Authors: Hao Yu
- Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrathin TiSix on n-Si(2018)
Authors: Hao Yu
Pages: 1869 - 1872 - Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 214 - 215 - Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 1 - 3 - Comprehensive study of Ga Activation in Si, SiGe and Ge and 5x10Ωcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 550 - 552 - Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations(2017)
Authors: Ashish Dabral, Hao Yu, Albert de Jamblinne de Meux, Michel Houssa
Pages: 303 - 311 - Lanthanum and lanthanum silicide contacts on N-Type silicon(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 843 - 846 - TiSi(Ge) contacts formed at low temperature achieving around 2x10-9Ωcm2 contact resistivities to p-SiGe(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 500 - 506