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Researcher
Giovanni Crupi
- Disciplines:Nanotechnology, Design theories and methods, Communications, Communications technology
Affiliations
- Waves: Core Research and Engineering (WaveCore) (Division)
Member
From1 Aug 2020 → 15 Jul 2007 - ESAT- TELEMIC, Telecommunications and Microwaves (Division)
Member
From1 Aug 2006 → 15 Jul 2007
Publications
1 - 10 of 55
- Straightforward modeling of dynamic I-V characteristics for microwave FETs(2014)
Authors: Gustavo Avolio, Dominique Schreurs, Giovanni Crupi, Bart Nauwelaers
Pages: 109 - 116 - Microwave de-embedding: from theory to applications(2014)
Authors: Giovanni Crupi, Dominique Schreurs
Number of pages: 5 - Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs(2013)
Authors: Giovanni Crupi, Dominique Schreurs, Gustavo Avolio
Pages: 184 - 187 - Artificial neural network modeling for transistors and varactors in FinFET technology(2013)
Authors: Giovanni Crupi, Dominique Schreurs
Pages: 188 - 191 - A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation(2013)
Authors: Gustavo Avolio, Giovanni Crupi, Dominique Schreurs
Pages: 1 - 3 - Identification of the intrinsic capacitive core for GaAs HEMTs by investigating the frequency behavior of the impedance parameters(2013)
Authors: Giovanni Crupi, Dominique Schreurs, Gustavo Avolio
Pages: 1237 - 1240 - A comprehensive review on microwave FinFET modeling for progressing beyond the state of art(2013)
Authors: Giovanni Crupi, Dominique Schreurs
Pages: 81 - 95 - A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments(2012)
Authors: Giovanni Crupi, Dominique Schreurs, Gustavo Avolio
Pages: 2801 - 2806 - MTT-S Graduate Student Fellowship Awards(2012)
Authors: Giovanni Crupi, Dominique Schreurs
Pages: 88 - 93 - Multibias neural modeling of FIN field-effect transistor admittance parameters(2012)
Authors: Giovanni Crupi, Dominique Schreurs
Pages: 2082 - 2088