< Back to previous page
Researcher
elena Capogreco
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 11 Oct 2017 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From15 Apr 2013 → 11 Oct 2017
Projects
1 - 1 of 1
- Alternative Channel Materials for 3-D NAND MemoriesFrom15 Apr 2013 → 4 Sep 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 7 of 7
- Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory(2016)
Authors: elena Capogreco, Jan Van Houdt
Pages: 6 - Direct three-dimensional observation of the conduction in poly-Si and In1-xGaxAs 3D NAND vertical channels(2016)
Authors: elena Capogreco, Jan Van Houdt, Kristin De Meyer, Wilfried Vandervorst
Pages: 192 - 193 - MOVPE In1-xGaxAs high mobility channel for 3-D NAND memory(2015)
Authors: elena Capogreco, Kristin De Meyer, Jan Van Houdt
Pages: 1 - 4 - Integration and electrical evaluation of Epi-Si and Epi-SiGe channels for 3D NAND memory applications(2015)
Authors: elena Capogreco, Vu Luong, Kristin De Meyer, Jan Van Houdt
Pages: 109 - 112 - Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model(2013)
Authors: Baojun Tang, elena Capogreco, Guido Groeseneken, Jan Van Houdt
Pages: 558 - 561 - Integration and electrical evaluation of Epi-Si and Epi-SiGe channels for 3D NAND memory applications
Authors: elena Capogreco, Robin Degraeve, Judit Lisoni, Vu Luong, Antonio Arreghini, Maria Toledano Luque, Andriy Hikavyy, Toshinori Numata, Kristin De Meyer, Geert Van den Bosch, et al.
Pages: 109 - 112 - Laser thermal anneal of polysilicon channel to boost 3D memory performance
Authors: elena Capogreco, Jan Van Houdt
Pages: 24 - 25