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Researcher
Denis Marcon
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 14 Jun 2011 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 14 Jun 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From5 Dec 2006 → 18 Nov 2007
Publications
1 - 10 of 37
- Time Dependent Dielectric Breakdown (TDDB) Evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs(2015)
Authors: Tian-Li Wu, Denis Marcon, Guido Groeseneken
Pages: 41 - 46 - Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics(2015)
Authors: Tian-Li Wu, Denis Marcon, Shuzhen You, Guido Groeseneken
Pages: 127 - 130 - Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors(2015)
Authors: Tian-Li Wu, Denis Marcon, Shuzhen You, Guido Groeseneken
Pages: 1001 - 1003 - Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors(2015)
Authors: Tian-Li Wu, Denis Marcon, Jacopo Franco, Guido Groeseneken
Pages: 093507 - Kinetics of buffer-related RON-increase in GaN-on-silicon MIS-HEMTs(2014)
Authors: Denis Marcon
Pages: 1004 - 1006 - Stability evaluation of Au-free ohmic contacts on AlGaN/GaN HEMTs under a constant current stress(2014)
Authors: Tian-Li Wu, Denis Marcon, Shuzhen You, Guido Groeseneken
Pages: 2232 - 2236 - GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS(2013)
Authors: Denis Marcon
Pages: 195 - 197 - Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs(2013)
Authors: Tian-Li Wu, Denis Marcon, Guido Groeseneken
Pages: 3 - Manufacturing challenges of GaN-on-Si HEMTs in a 200 mm CMOS fab(2013)
Authors: Denis Marcon
Pages: 361 - 367 - AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction(2013)
Authors: Denis Marcon
Pages: 3119 - 3131