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Researcher
Cor Claeys
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 18 Nov 2007
Publications
31 - 40 of 455
- Electrical Activity of Iron and Copper in Si, SiGe and Ge(2018)
Authors: Cor Claeys
Pages: 125 - 196Number of pages: 72 - Metal Impurities in Silicon- and Germanium-Based Technologies Origin, Characterization, Control, and Device Impact Preface(2018)
Authors: Cor Claeys
Pages: VII - VIIINumber of pages: 2 - Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs(2018)
Authors: Cor Claeys
Number of pages: 4 - On the Low-Frequency Noise of High-κ Gate Stacks: What Did We Learn?(2018)
Authors: Cor Claeys
Pages: 97 - 100Number of pages: 4 - Modeling of Metal Properties in Si,Si1-xGex and Ge(2018)
Authors: Cor Claeys
Pages: 389 - 433Number of pages: 45 - Metal Impurities in Silicon- and Germanium-Based Technologies Origin, Characterization, Control, and Device Impact Introduction(2018)
Authors: Cor Claeys
Pages: 1 - 7Number of pages: 7 - Preface(2018)
Authors: Cor Claeys, E Simoen
- Electrical Properties of Metals in Si and Ge(2018)
Authors: Cor Claeys
Pages: 197 - 285Number of pages: 89 - Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality(2018)
Authors: Cor Claeys
Pages: Q26 - Q32 - Gettering and Passivation of Metals in Silicon and Germanium(2018)
Authors: Cor Claeys
Pages: 351 - 388Number of pages: 38