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Researcher
Cor Claeys
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 18 Nov 2007
Publications
21 - 30 of 455
- Performance of differential pair circuits designed with line tunnel FET devices at different temperatures(2018)
Authors: Cor Claeys
- Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100K(2018)
Authors: Cor Claeys
- Do we have to worry about extended defects in high-mobility materials?(2018)
Authors: Po-Chun Hsu, Marc Heyns, Cor Claeys
Pages: 1 - 4 - Opposite trends between digital and analog performance for different TFET technologies(2018)
Authors: Cor Claeys
Pages: 1 - 4 - Junctionless Versus Inversion-Mode Gate-All-Around Nanowire Transistors From a Low-Frequency Noise Perspective(2018)
Authors: Cor Claeys
Pages: 1487 - 1492 - Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs(2018)
Authors: Cor Claeys
Pages: 1 - 3 - Characterization and Detection of Metals in Silicon and Germanium(2018)
Authors: Cor Claeys
Pages: 75 - 123Number of pages: 49 - Source of Metals in Si and Ge Crystal Growth and Processing(2018)
Authors: Cor Claeys
Pages: 37 - 74Number of pages: 38 - Impact of Metals on Silicon Devices and Circuits(2018)
Authors: Cor Claeys
Pages: 287 - 350Number of pages: 64 - Basic Properties of Transition Metals in Semiconductors(2018)
Authors: Cor Claeys
Pages: 9 - 35Number of pages: 27