< Back to previous page
Researcher
Kristin De Meyer
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Aug 2010 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 31 Jul 2010
Projects
1 - 7 of 7
- Statistical Analysis and Modeling of Selectorless Non-filamentary Resistive RAMFrom16 Jun 2014 → 25 Nov 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance StudyFrom20 Jan 2014 → 4 Sep 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Alternative Channel Materials for 3-D NAND MemoriesFrom15 Apr 2013 → 4 Sep 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical Transistors: a slippery path towards the ultimate CMOS scalingFrom1 Nov 2012 → 26 Jan 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- A Study of Oxide Defects in III-V MOS Devices using Electrical and Mathematical MethodsFrom1 Oct 2012 → 28 Oct 2016Funding: Own budget, for example: patrimony, inscription fees, gifts
- Combined tunneling and Raman spectroscopy in nanogaps for single molecule analysis.From1 Oct 2011 → 30 Sep 2014Funding: FWO fellowships
- Nano-Electro-Mechanical Relays (Design, Fabrication, and Characterization)From6 Sep 2011 → 19 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
161 - 170 of 177
- Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
Authors: Andre Stesmans, Stefan De Gendt, Kristin De Meyer
Pages: 1 - 3 - Perspective of tunnel-FET for future low-power technology nodes
Authors: Anne Verhulst, Devin Verreck, Quentin Smets, Kuo-hsing Kao, Maarten Van de Put, Rita Rooyackers, Bart Soree, Anne Vandooren, Kristin De Meyer, Guido Groeseneken, et al.
Pages: 717 - 720 - Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach
Authors: Stefan De Gendt, Kristin De Meyer
Pages: 1805 - 1807 - A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
Authors: Kristin De Meyer, Jan Van Houdt
Pages: 2726 - 2735 - Kinetic defect distribution approach for modeling the transient, endurance and retention of a-VMCO RRAM
Authors: Kristin De Meyer, Jan Van Houdt
Pages: 5 - Interface stability in advanced high-k-metal-gate stacks
Authors: Johan Meersschaut, Kristin De Meyer, Jorge Kittl
Pages: 1021 - 1025 - Investigation on the temperature dependence of the dielectric constant of high-k materials for non-volatile memory applications
Authors: Amit Suhane, Kristin De Meyer, Jan Van Houdt
Pages: 101 - 104 - Modeling of uniform switching RRAM devices and impact of critical defects
Authors: Subhali Subhechha, Robin Degraeve, Philippe Roussel, Ludovic Goux, Sergiu Clima, Kristin De Meyer, Jan Van Houdt, Gouri Sankar Kar
Pages: 178 - SiGe band-to-band tunneling calibration based on p-i-n diodes: fabrication, measurement and simulation
Authors: Anne Verhulst, Kristin De Meyer, Marc Heyns
Pages: 965 - 970 - Multiple-Vt FinFET devices through La2O3 dielectric capping
Authors: Johan Meersschaut, Kristin De Meyer
Pages: 121 - 122