Researcher
Christina De Meyer
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → Today - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Aug 2010 → 31 Jul 2020
Projects
1 - 7 of 7 results
- Statistical Analysis and Modeling of Selectorless Non-filamentary Resistive RAMFrom16 Jun 2014 → 25 Nov 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance StudyFrom20 Jan 2014 → 4 Sep 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Alternative Channel Materials for 3-D NAND MemoriesFrom15 Apr 2013 → 4 Sep 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical Transistors: a slippery path towards the ultimate CMOS scalingFrom1 Nov 2012 → 26 Jan 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- A Study of Oxide Defects in III-V MOS Devices using Electrical and Mathematical MethodsFrom1 Oct 2012 → 28 Oct 2016Funding: Own budget, for example: patrimony, inscription fees, gifts
- Combined tunneling and Raman spectroscopy in nanogaps for single molecule analysis.From1 Oct 2011 → 30 Sep 2014Funding: FWO fellowships
- Nano-Electro-Mechanical Relays (Design, Fabrication, and Characterization)From6 Sep 2011 → 19 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 165 results
- Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance Study(2020)
Authors: Sivaramakrishnan Ramesh, Christina De Meyer, Nadine Collaert
- Statistical Analysis and Modeling of Selectorless Non-filamentary Resistive RAM(2019)
Authors: Subhali Subhechha Xxx, Christina De Meyer, Jan Van Houdt
- Regular and Inverted Operating Regimes in TiN/a-Si/TiOx/TiN RRAM Devices(2018)
Authors: Subhali Subhechha Xxx, Robin Degraeve, Philippe Roussel, Ludovic Goux, Sergiu Clima, Christina De Meyer, Jan Van Houdt, Gouri Sankar Kar
Pages: 351 - 354Number of pages: 4 - Thermal Stability of TiN/Ti/p(+)-Si0.3Ge0.7 Contact With Ultralow Contact Resistivity(2018)
Authors: Jian Zhang, Hao Yu, Lin-Lin Wang, Marc Schaekers, D Mocuta, Naoto Horiguchi, Nadine Collaert, Christina De Meyer, Yu-Long Jiang
Pages: 83 - 86Number of pages: 4 - On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by capacitance-voltage hysteresis(2017)
Authors: Abhitosh Vais, Jacopo Franco, Dennis Lin, Vamsi Putcha, Sonja Sioncke, Anda Mocuta, Nadine Collaert, Aaron Thean, Christina De Meyer
Pages: 144504 - Study of electrical breakdown and secondary pull-in failure modes for NEM relays(2017)
Authors: Maliheh Ramezani, S Severi, HAC Tilmans, Christina De Meyer
Number of pages: 8 - Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal(2017)
Authors: Soon Aik Chew, Hao Yu, Marc Schaekers, Steven Demuynck, Geert Mannaert, Eddy Kunnen, Erik Rosseel, Andriy Hikavyy, Anish Dangol, Christina De Meyer, et al.
Pages: 1 - 3 - Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory(2017)
Authors: Elena Capogreco, Alexandre Subirats, Judit Gloria Lisoni, Antonio Arreghini, Bernardette Kunert, Weiming Guo, Chi Lim Tan, Romain Delhougne, Geert Van den Bosch, Christina De Meyer, et al.
Pages: 130 - 136 - Modeling of uniform switching RRAM devices and impact of critical defects(2017)
Authors: Subhali Subhechha, Robin Degraeve, Philippe Roussel, Ludovic Goux, Sergiu Clima, Christina De Meyer, Jan Van Houdt, Gouri Sankar Kar
Pages: 178 - Record performance top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets(2017)
Authors: Siva Ramesh, Tsvetan Ivanov, Vamsi Putcha, AliReza Alian, Arturo Sibaja-Hernandez, Rita Rooyackers, Elisabeth Camerotto, Alexey Milenin, Nicolo Pinna, Salim El Kazzi, et al.
Pages: 409 - 412