Researcher
Annelies Delabie
- Disciplines:Physical chemistry, Theoretical and computational chemistry, Other chemical sciences, Biochemistry and metabolism, Medical biochemistry and metabolism, Atmospheric sciences
Affiliations
- Quantum Chemistry and Physical Chemistry (Division)
Member
From1 Oct 2012 → Today
Projects
1 - 10 of 19
- Ferroelectric memories: multi-layers stacks with tailored physical and electric properties by atomic layer depositionFrom20 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic-scale bottom-up fabrication: Area-Selective Deposition (ASD) of Si-based dielectrics and its application in IC manufacturingFrom15 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Interface study of ferroelectric/oxide semiconductor stacks and devicesFrom20 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Area-selective deposition mechanisms when pattern dimensions reach the nanoscaleFrom11 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic layer deposition of two-dimensional transition metal dichalcogenides and ovonic threshold switching materials: A new computational framework for precursor designFrom1 Oct 2022 → TodayFunding: FWO Strategic Basic Research Grant
- Alternative semiconducting oxides for future DRAM applicationsFrom25 May 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Creating dielectric layers on two-dimensional (2D) semiconductors: chemical and physical mechanismsFrom18 Jan 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Mechanisms and Selectivity during Atomic Layer Deposition of Germanium Chalcogenides for Storage Class Memory ApplicationsFrom1 Oct 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Dielectric Nanosheets for Scaled Two-Dimensional (2D) Material DevicesFrom22 Jan 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Towards graphoepitaxy of semiconducting 2D single crystals on dielectric substrate patterns for next generation nanoelectronic devicesFrom5 Jan 2021 → TodayFunding: FWO Strategic Basic Research Grant
Publications
41 - 50 of 180
- Two-dimensional WS2 nanoribbon deposition by conversion of pre-patterned amorphous silicon(2017)
Authors: Markus Heyne, Annelies Delabie, Iuliana Radu, Stefan De Gendt
- Atomic layer deposition of ruthenium thin films from (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru: process characteristics, surface chemistry, and film properties(2017)
Authors: Benjamin Groven, Quan Phung, Shibesh Dutta, Johan Meersschaut, Annelies Delabie
Pages: 4654 - 4666 - Structural characterization of SnS crystals formed by chemical vapour deposition(2017)
Authors: Ankit Nalin Mehta, Haodong Zhang, Ashish Dabral, Annelies Delabie, Michel Houssa, Wilfried Vandervorst
Pages: 276 - 287 - Study of electron traps associated with oxygen superlattices in n-type silicon(2017)
Authors: Annelies Delabie, Marc Heyns
Pages: 1700136 - Study of electrically active defects in epitaxial layers on silicon(2016)
Authors: Sathish Kumar Dhayalan, Somya Gupta, Annelies Delabie
Number of pages: 3 - Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon(2016)
Authors: Annelies Delabie, Marc Heyns
Pages: 718 - 723 - Deep levels in silicon-oxygen superlattices(2016)
Authors: Suseendran Jayachandran, Annelies Delabie, Marc Heyns
Pages: 1 - 8 - Valence Band Profile in Two-Dimensional Silicon-Oxygen Superlattices Probed by Internal Photoemission(2016)
Authors: Nadiia Kolomiiets, Valeri Afanasiev, Annelies Delabie, Marc Heyns, Andre Stesmans
Pages: Q3008 - Q3011 - Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure(2016)
Authors: Suseendran Jayachandran, Arne Billen, Johan Meersschaut, Wilfried Vandervorst, Marc Heyns, Annelies Delabie
Pages: 152 - 160 - Quasi Two-Dimensional Si-O Superlattices: Atomically Controlled Growth and Electrical Properties(2016)
Authors: Suseendran Jayachandran, Koen Martens, Johan Meersschaut, Wilfried Vandervorst, Marc Heyns, Annelies Delabie
Pages: 396 - 403
Patents
1 - 10 of 10
- Method of manufacturing a semiconductor structure (Inventor)
- Method of manufacturing a semiconductor structure (Inventor)
- A method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- A method for forming a silicide gate for a semiconductor device (Inventor)
- Method of producing transition metal dichalcogenide layer (Inventor)
- Method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- Method of forming a feature of a target material on a substrate (Inventor)
- METHOD OF PRODUCING TRANSITION METAL DICHALCOGENIDE LAYER (Inventor)
- Method for selectively depositing noble metals on metal/metal nitride substrates (Inventor)
- Oxygen monolayer on a semiconductor (Inventor)