Researcher
Andre Stesmans
- Disciplines:Condensed matter physics and nanophysics
Affiliations
- Semiconductor Physics (Division)
Member
From1 Oct 1999 → Today
Projects
1 - 10 of 10
- Atomic assessment of paramagnetic defects in 2-dimensional semiconductor layers: MoS2From1 Jan 2016 → 23 Jan 2020Funding: BOF - Doctoral projects
- Advanced Ultra-sensitive magnetometry infrastructure. AutomaticFrom19 May 2014 → 18 Nov 2018Funding: Hercules - Small and Medium size research infrastructure
- Internal Photoemission in Semiconductor Heterostructures with Engineered Barriers: Impact of Interface DipolesFrom1 Oct 2013 → 10 Sep 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Magnetic and magneto-optical phenomena in inorganic/organic hybrid materialsFrom1 Jan 2013 → 31 Dec 2016Funding: FWO research project (including WEAVE projects)
- Spectroscopy of semiconductor/insulator and metal/insulator interface dipoles.From1 Jan 2013 → 31 Dec 2016Funding: FWO research project (including WEAVE projects)
- Crystalline organic thin films with large exciton diffusion lengths for high efficiency organic solar cells.From1 Oct 2012 → 30 Sep 2013Funding: BOF - Other initiatives
- Electronic and ionic transport in functional oxides.From1 Oct 2010 → 30 Sep 2013Funding: FWO fellowships
- SILASOL: New Silicon Materials for Solar Applications.From1 Jan 2010 → 31 Dec 2013Funding: SBO (Strategic basic research)
- Spectroscopy of electron states at interfaces of AIIIBV semiconductors with non-native oxides.From1 Jan 2009 → 31 Dec 2014Funding: FWO research project (including WEAVE projects)
- Nanoscale Confinement in Fluxonics and Photonics Probed and Tuned by Magnetic Field.From1 Oct 2008 → 30 Sep 2013Funding: BOF - Concerted Research Project from 1994
Publications
21 - 30 of 310
- Impact of MoS2 layer transfer on electrostatics of MoS2/SiO2 interface(2019)
Authors: Valeri Afanasiev, Michel Houssa, Iuliana Radu, Andre Stesmans
- Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions(2019)
Authors: Michel Houssa, Ashish Dabral, Valeri Afanasiev, Andre Stesmans
Pages: 760 - 766 - Hole-Doped 2D InSe for Spintronic Applications(2018)
Authors: Michel Houssa, Valeri Afanasiev, Andre Stesmans
Pages: 6656 - 6665 - Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism(2018)
Authors: Benjamin Groven, Johan Meersschaut, Ben Schoenaers, Andre Stesmans, Valeri Afanasiev, Wilfried Vandervorst, Marc Heyns, Iuliana Radu, Annelies Delabie
Pages: 7648 - 7663 - Structural Properties of Al-O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density(2018)
Authors: Ben Schoenaers, Andre Stesmans
Pages: 30495 - 30505 - Nitrogen acceptor in 2H-polytyp synthetic MoS2 assessed by multifrequency electron spin resonance(2018)
Authors: Ben Schoenaers, Andre Stesmans, Valeri Afanasiev
- Ferromagnetism in two-dimensional hole-doped SnO(2018)
Authors: Michel Houssa, Konstantina Iordanidou, Valeri Afanasiev, Andre Stesmans
- On the chemistry and electrochemistry of LiPON breakdown(2018)
Authors: Philippe Vereecken, Andre Stesmans
Pages: 4848 - 4859 - Silicene on non-metallic substrates: Recent theoretical and experimental advances (vol 11, pg 1169, 2018)(2018)
Authors: Emilio Scalise, Konstantina Iordanidou, Valeri Afanasiev, Andre Stesmans, Michel Houssa
Pages: 1755 - 1755 - Silicene on non-metallic substrates: Recent theoretical and experimental advances(2018)
Authors: Konstantina Iordanidou, Valeri Afanasiev, Andre Stesmans, Michel Houssa
Pages: 1169 - 1182