Researcher
Ali Reza Alian
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 31 Aug 2012 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From15 Mar 2011 → 31 Aug 2012 - Department of Electrical Engineering (ESAT) (Department)
Member
From10 Sep 2007 → 14 Mar 2011
Publications
1 - 10 of 27
- Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET(2015)
Authors: Ali Reza Alian, Jacopo Franco, Anne Verhulst, Devin Verreck
Pages: 823 - 826 - The assessment of border traps in high-mobility channel materials(2015)
Authors: Ali Reza Alian, Hiroaki Arimura, Cor Claeys
Pages: 205 - 217 - ESD characterization of planar InGaAs devices(2015)
Authors: Roman Boschke, Geert Hellings, Shih-Hung Chen, Ali Reza Alian, Jacopo Franco, Guido Groeseneken
Pages: 3 - The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices(2015)
Authors: Abhitosh Vais, Koen Martens, Jacopo Franco, Ali Reza Alian, Marc Heyns, Guido Groeseneken, Kristin De Meyer
Pages: 5 - BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities(2014)
Authors: Guido Groeseneken, Jacopo Franco, Ali Reza Alian, Hiroaki Arimura, Niamh Waldron, Marc Heyns
Pages: 828 - 831 - BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs(2014)
Authors: Jacopo Franco, Hiroaki Arimura, Niamh Waldron, Abhitosh Vais, Ali Reza Alian, Mohammad Ali Pourghaderi, Koen Martens, Marc Heyns, Guido Groeseneken
Pages: 53 - 57Number of pages: 5 - Impact of pre- and post-growth treatment on the low-frequency noise of InGaAs nMOSFETs(2014)
Authors: Ali Reza Alian, Clement Merckling, Cor Claeys
Pages: 115 - 120 - Border traps in InGaAs nMOSFETs assessed by low-frequency noise(2014)
Authors: Somya Gupta, Ali Reza Alian
Pages: 720 - 722 - RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs(2014)
Authors: Jacopo Franco, Niamh Waldron, Ali Reza Alian, Mohammad Ali Pourghaderi, Guido Groeseneken
Pages: 506 - 509 - In0.53Ga0.47As diodes for band-to-band tunneling calibration: design, fabrication and characterization(2013)
Authors: Han Chung Lin, Ali Reza Alian, Mohammad Ali Pourghaderi, Devin Verreck, Marc Heyns
Pages: 752 - 753
Patents
1 - 1 of 1
- Drain extension region for tunnel fet (Inventor)