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Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations

Journal Contribution - Journal Article

© 1993-2012 IEEE. Advanced scaling and the introduction of new materials in the metal-oxide-semiconductor field-effect transistor (MOSFET) raise concerns about its reliability. Several degradation mechanisms, depending on operating conditions and time, can cause a significant change of the transistor parameters. The transistor area plays a large role when it comes to aging. In large-area MOSFETs, aging appears deterministic, while in small-area devices it is stochastic and convoluted with random telegraph noise. This is analogous to the time-zero random variability, which also reduces as the transistor gate area increases. The scope of this paper is to extend the knowledge of the time-dependent random variability as a function of MOSFET gate area scaling. The goal is to aid the designers in transistor sizing toward a more reliable design. As an example, the impact of time-dependent random variability is illustrated for an analog-to-digital converter.
Journal: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
ISSN: 1063-8210
Issue: 3
Volume: 27
Pages: 601 - 610
Number of pages: 10
Publication year:2019
Keywords:Computer science/information technology, Electrical & electronic engineering