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Publication

Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

Journal Contribution - Journal Article

Journal: IEEE Electron Device Letters

ISSN: 0741-3106

Issue: 7

Volume: 41

Pages: 1110 - 1113

Publication year:2020

WoS Id: 000545436900038
DOI: https://doi.org/10.1109/led.2020.2997319
Institutional Repository URL: https://lirias.kuleuven.be/3261712