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Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance
Book Contribution - Book Chapter Conference Contribution
© 2017 JSAP. We report on novel integrated Se-based Ovonic Threshold Switching selector devices, with sizes down to 50nm, which can be operated reliably at high drive current densities, exceeding 20MA/cm2, and have high half-bias nonlinearity exceeding well 103. We show functional devices after a thermal budget of 350°C. Their electrical properties are tunable by careful control of the GexSe1-x films composition, thickness or process condition.
Book: Symposium on VLSI Technology
Pages: 92 - 93