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Publication
Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx
Journal Contribution - Journal Article
Journal: Ecs Journal Of Solid State Science And Technology
ISSN: 2162-8769
Issue: 4
Volume: 9
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Open