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Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor

Journal Contribution - Journal Article

In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET. © 2011 Springer Science+Business Media LLC.
Journal: Journal of Computational Electronics
ISSN: 1569-8025
Issue: 1
Volume: 10
Pages: 216 - 221
Publication year:2011
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education