Hydrogen outgassing induced liner/barrier reliability degradation in through silicon via's

Degraded liner/barrier integrity is observed in 3D Cu through silicon via systems using a sub-atmospheric chemical vapor deposition O3/tetraethyl orthosilicate (TEOS) oxide liner and a physical vapor deposition Ta barrier. By analyzing the data of thermal desorption spectroscopy and Fourier transform infrared spectroscopy, the source of the degradation is found to be outgassed hydrogen from the liner. To overcome this hydrogen induced degradation, three alternative liner/ barrier schemes are proposed and validated: 1) a capped O3/TEOS liner, 2) a metal barrier that is resistant to hydrogen, and 3) a denser oxide liner.

Publication year:2014

BOF-keylabel:yes

IOF-keylabel:yes

BOF-publication weight:1

CSS-citation score:1

Authors from:Government, Higher Education

Accessibility:Open