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Publication

GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and VT instability effect

Journal Contribution - Journal Article

Journal: Semiconductor Science and Technology
ISSN: 0268-1242
Issue: 3
Volume: 36
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education
Accessibility:Open