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Publication
Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
Journal Contribution - Journal Article
Journal: Solid-State Electronics
ISSN: 0038-1101
Volume: 183
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education
Accessibility:Open