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Direct observation of the lattice sites of implanted manganese in silicon

Journal Contribution - Journal Article

© 2016, Springer-Verlag Berlin Heidelberg. Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, (Formula presented.) and (Formula presented.)) in the highly dilute regime. Three different lattice sites were identified by means of emission channeling experiments: ideal substitutional sites; sites displaced from bond-centered toward substitutional sites; and sites displaced from anti-bonding toward tetrahedral interstitial sites. For all doping types investigated, the substitutional fraction remained below  (Formula presented.) 30 %. We discuss the origin of the observed lattice sites as well as the implications of such structures on the understanding of Mn-doped Si systems.
Journal: Applied Physics A : Materials Science & Processing
ISSN: 0947-8396
Issue: 3
Volume: 241
Pages: 1 - 8
Publication year:2016