Technology and building blocks for wide bandgap based power converters

Continous evolution in the powerelectronics domain enables smaller, more efficient and reliable powermanagement systems. To continue this evolution alternatives for the current silicon (Si) based power transistors have to be found. Promising alternatives are found in the wide bandgap (WBG) materials, with galliumnitride (GaN) and silicon carbide (SiC) as most well known, mature, variants. Their use leads to smaller and more efficient, and therefore cheaper, power converters. On top of this they are able to function in wide operating areas. The use of these materials in industry is limited, due to the relative immaturity and high non-recurrent engineering cost. This research will focus on the development of the necessary building blocks to construct WBG based powermanagement solutions where high reliability is required under harsh environmental conditions. Often these harsh conditions are also where the benefits of WBG materials are the highest compared to silicon. For example: High voltages (up to 1200V), high temperature as a consequence of high power density, radiation, ... To reach optimal and cost effective solutions an exploration in different technologies to design these driver circuits has to be done. To evaluate this, the main building blocks (gate driver and galvanic isolation) will be designed and produced. Test setups will be built and measurement campaigns organised to subject the test-chip to the predefined environmental conditions. Because these building blocks on their own are also relevant for industry, the possibilities for valorisation will be investigated.