Synthesis of few layered transition metal dichalcogenides by ion implantation (SIMPLANT). (SIMPLANT)

The SIMPLANT proposal addresses point 1 of the topic descriptions of the Graphene JTC areas, namely, "Synthesis and characterization of Layered Materials (LMs) beyond graphene". We propose a novel, large-scale method, based on ion implantation, for the controlled synthesis of few-layer transition metal dichalcogenides (TMDCs) of general formula MX2, where M is the transition metal and X the chalcogen element. Ion implantation is a highly reproducible processing method, extensively used in the microelectranies industry.

The goal of this project is to develop a large-scale technique for the uniform synthesis of TMDCs (MoS2 and/or WS2) with a controlled number of unit layers, using ion implantation followed by an appropriate thermal annealing at high temperature. Detailed characterizations of the TMDC layers after ion implantation and annealing will be performed, using both in situ and ex situ characterization techniques. These include Raman spectroscopy, angle resolved photoelectron spectroscopy (ARPES), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), aberration-corrected high resolution transmission electron microscopy (HR-TEM), scanning tunnellingmicroscopy and spectroscopy, transport measurements (field-effect carrier mobility extracted from transistor characteristics) and photodetection (responsivity) measurements, among other standard characterization techniques. The Flemish partners are mostly responsible for the first steps of fabrication, namely the metal thin-film growth and ion implantation; they will be involved toa lesser extent in the subsequent processing steps (thermal annealing and device fabrication). They will also be responsible for the scanning tunnelling and microscopy based characterization.