Study of Process Technology and Device Architecture for Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

Amorphous oxide semiconductors (AOS) based thin film transistors (TFTs) find potential applications in the field of large area electronics. Among the various AOS, amorphous Indium Gallium Zinc Oxide (a-IGZO) based TFTs have been broadly researched in the display industry. The characteristics such as high mobility, large-area uniformity, transparency, and low-temperature processing make a-IGZO TFTs suitable for next generation Active Matrix  Liquid Crystal Displays (AMLCDs) and Active Matrix Organic Light Emitting Diode (AMOLED) displays. The advancement of a-IGZO TFT based applications relies on a thorough understanding of the impact of the material properties and process integration on the performance and reliability of a TFT. The objective of this thesis is to fabricate a-IGZO TFTs with different architectures and to understand the impact of different materials and process integration variables on device performance.