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Project

Radiation Hardened Aging Resilient Digital Integrated Circuits in Nanoscale CMOS Technology

long-term reliability of recent CMOS technologies is impacted by different intrinsic degradation mechanisms that progressively alter their electrical characteristics (BTI, HCI, TDDB...). Due to the ongoing aggressive scaling process, those mechanisms exhibit significant dispersions related to the process details and variability. The parametric evolution induced by those mechanisms constitutes a reliability risk, both directly, by compromising the electronic functions, and indirectly, by weakening the circuit robustness to external perturbations like radiation. To date, radiation testing standards are based on fresh devices characterization. This PhD investigates the impact of aging degradation mechanisms on the radiation susceptibility of complex digital integrated circuits in nanoscale CMOS technologies. This will be achieved through developing dynamic models of the components robustness to radiation effects, taking into account the intrinsic performance degradation due to the diverse aging mechanisms, and calibrated based on experimental campaigns at different steps of accelerated aging for diverse type of complex components (microprocessor, FPGA, memories). Specific accelerated test procedures will be optimized for each type of complex component in order to be representative of different mission profiles in terms of electrical and thermal workload.

Date:4 Dec 2017 →  4 Dec 2021
Keywords:Nanoscale CMOS, Radiation Hardened, Aging Resilient, Digital Integrated Circuits
Disciplines:Modelling, Multimedia processing, Applied mathematics in specific fields
Project type:PhD project