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Project

PRACTICAL CONSIDERATIONS FOR HIGH EFFICIENCY GaN POWER CONVERTERS

Gallium nitride (GaN) material devices are considered as a promising device for next-generation power electronics due to its intrinsic properties such as high-breakdown field, high-electron mobility, low ON-resistance, and good thermal conductivity. Due to the introduction of GaN materials, applications such as power converters have obtained remarkable improvements. Therefore, the aim of this project is to address the implications of increasing the power efficiency of AC/DC and DC/DC power converters for electric vehicle charging. The research will focus on power converters using gallium nitride for charger modules intended to be used in real charging stations.

Date:30 Sep 2019  →  Today
Keywords:GaN-HEMT, Power Electronics
Disciplines:Semiconductor devices, nanoelectronics and technology
Project type:PhD project