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PHD researcher on structure of 2Dsemiconductor-dielectrics interfaces.

As the academy found the abundant nature of graphene, a two-dimensional material which draws a lot of attention. After decades of research, it was found that the interesting nature of layered materials with strong in-plane bonding and weak out-of-plane interactions could possibly leads the semiconductor device application into a new era. However the electrical properties of graphene is not suitable to be a channel in a metal-oxide semiconductor field-effect transistor (MOSFET) device, as the band gap closed up at the k-points in reciprocal lattice. Recent advances in nano-scale materials characterization and device fabrication have opened up new opportunities for two-dimensional (2D) layers of thin transition metal dichalcogenides (MX2) in nano-electronics and opto-electronics. MX2 layers such as MoS2, MoSe2, WS2 and WSe2 have sizable band gaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. However, the 2D-nature with weak out-of-plane interaction still need more understanding, and the thesis is about understanding the 2D-nature by growing oxide with high quality and how does the oxide quality interact with the MOSFET device.

Date:2 Aug 2018  →  Today
Keywords:2D material, MOSCAP, High-k dielectric, post treatment, gate-channel interface
Disciplines:Biochemistry and metabolism, Medical biochemistry and metabolism, Physical chemistry, Theoretical and computational chemistry, Other chemical sciences, Manufacturing engineering, Safety engineering
Project type:PhD project