Computer modeling and experimental validation for plasmas used for etching in the microelectronics industry.

Computer simulations will be performed for describing the plasma chemistry and physics in two reactors used for etching in the microelectronics industry, i.e., inductively coupled plasmas (ICP) and dual frequency capacitively coupled plasmas (CCP). Several fluorocarbon-based gas mixtures will be considered. The effect of different operating conditions (pressure, gas ratio, power, frequency,. . .) will be investigated to predict under which conditions both discharges have optimum performance. Experimental validation of the calculations will be carried out in both types of reactors. Finally, the effect of these operating conditions on the trench formation, the etch rate, uniformity, selectivity and anisotropy will be investigated.

Keywords:FLUID MODELS, PLASMA SIMULATION, COMPUTER SIMULATIONS, PLASMA, MICRO ELECTRONICS, COMPUTER MODELING, MONTE CARLO

Disciplines:Applied mathematics in specific fields, Classical physics, Physics of gases, plasmas and electric discharges, Physical chemistry

Project type:Collaboration project