Optical sensor and thin film photodiode

An optical sensor (100) comprises stacked layers comprising: a window layer (101) which allows the passage of photons (200); a sensing layer (102) for generating charges upon impinging of the photons through the window layer (101); and a bottom electrode layer (103) comprising at least one bottom electrode (105) for receiving charges generated in the sensing layer (102). The sensing layer (102) is sandwiched between the window layer (101) and the bottom electrode layer (103). The at least one bottom electrode (105) of the bottom electrode layer (103) comprises conductive material with reflectivity higher than 0.7 to reflect back received photons (201) into the sensing layer (102); and the at least one bottom electrode (105) is obtained by semiconductor device fabrication techniques.

Patent Publication Number: EP3817071

Year filing: 2021

Year approval: 2022

Year publication: 2021

Status: Requested

Technology domains: Semiconductors

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven