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Patent

An mram device and its manufacturing method

Disclosed is a device, comprising: a first interconnection level (110) including a first dielectric layer (112) and a first set of conductive paths (111) arranged in the first dielectric layer, a second interconnection level (120) arranged on the first connection level and including a second dielectric layer (122) and a second set of conductive paths (121) arranged in the second dielectric layer, a third interconnection level (130) arranged on the second interconnection level and including a third dielectric layer (132) and a third set of conductive paths (131) arranged in the third dielectric layer, a magnetic tunnel junction, MTJ, device (140) including a bottom layer (142), a top layer (146) and an MTJ structure (144) arranged between the bottom layer and the top layer, wherein the bottom layer is connected to a bottom layer contact portion (116) of the first set of conductive paths and the top layer is connected to a top layer contact portion (135) of the second or third set of conductive paths, and a multi-level via (150) extending through the second dielectric layer and the third dielectric layer, between a first via contact portion (118) of the first set of conductive paths and a second via contact portion (138) of the third set of conductive paths, wherein a height of the MTJ device corresponds to, or is less than, a height of the multi-level via.
Patent Publication Number: EP3367439
Year filing: 2021
Year approval: 2021
Year publication: 2021
Status: Assigned
Technology domains: Semiconductors
Validated for IOF-key: Yes
Attributed to: Associatie KULeuven