Method of patterning an amorphous semiconductor layer

Methods of patterning an amorphous semiconductor layer according to a predetermined pattern via laser ablation with a pulsed laser having a laser wavelength are disclosed. In one aspect, a method may include providing the amorphous semiconductor layer on a substrate, providing a distributed Bragg reflector on the amorphous semiconductor layer, wherein the distributed Bragg reflector is reflective at the laser wavelength, providing an absorbing layer on the distributed Bragg reflector, wherein the absorbing layer is absorptive at the laser wavelength, patterning the absorbing layer by laser ablation, in accordance with the predetermined pattern, patterning the distributed Bragg reflector by performing an etching step using the patterned absorbing layer as an etch mask, and etching the amorphous semiconductor layer using the patterned distributed Bragg reflector as an etch mask. Methods of fabricating silicon heterojunction back contact photovoltaic cell(s) using such amorphous semiconductor layer patterning process are also disclosed.

Patent Publication Number: US10326031

Year filing: 2019

Year approval: 2019

Year publication: 2019

Status: Assigned

Technology domains: Semiconductors

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven