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Patent
Method of manufacturing a vertical TFET
The present invention provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack (24) comprising a layer of channel material (34) with on top thereof a layer of sacrificial material (21), removing material from the stack (24) so as to form at least one nanowire (30) from the layer of channel material (34) and the layer of sacrificial material (21), and replacing the sacrificial material (21) in the at least one nanowire (30) by heterojunction material (41, 52). A method according to embodiments of the present invention is advantageous as it enables easy manufacturing of complementary TFETs.
Patent Publication Number: EP2378557
Year filing: 2010
Year approval: 2015
Year publication: 2015
Status: Assigned
URI: link to Espacenet
Technology domains: Semiconductors
Validated for IOF-key: Yes
Attributed to: Associatie KULeuven