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Patent
Method for differential heating of elongate nano-scaled structures
The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.
Patent Publication Number: US10014178
Year filing: 2018
Year approval: 2018
Year publication: 2018
Status: Assigned
URI: link to Espacenet
Technology domains: Semiconductors
Validated for IOF-key: Yes
Attributed to: Associatie KULeuven