Dual stack sot

A material layer stack, a non-volatile memory device comprising the stack, and arrays thereof are described. The material layer stack (11; 21; 31) comprises a first and a second magnetic tunnel junction (14, 15) and a first top electrode (13a) formed on a top face (17b) of the stack. A shoulder (18a) is formed on a lateral face of the stack and divides the stack into a lower portion and an upper portion, wherein a tunnel barrier (14b) of the first magnetic tunnel junction is comprised by the lower stack portion and a tunnel barrier (15b) of the second magnetic tunnel junction by the upper stack portion. A second top electrode (13b) is formed on the shoulder. Each magnetic tunnel junction is adapted to store a bit as a reconfigurable magnetoresistance of its magnetic electrodes (14a, 14c, 15a, 15c). Preferably, a bottom face (17a) of the stack is connected to a conductor (12) supporting current induced magnetic polarization switching for the first magnetic tunnel junction by spin-orbit torque; magnetic polarization switching for the second magnetic tunnel junction is preferably achieved by spin-transfer torque.

Patent Publication Number: EP3839955

Year filing: 2021

Year approval: 2022

Year publication: 2021

Status: Requested

Technology domains: Computer technology

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven