< Back to previous page

Patent

Back contact photovoltaic cells with induced junctions

A back contact photovoltaic cell is provided, the photovoltaic cell comprising at a rear side of a silicon substrate an emitter region at first predetermined locations and a back surface field region at second predetermined locations, wherein the emitter region and the back surface field region are field induced regions. The emitter region is induced by a first layer stack comprising a passivating tunneling layer and a first transparent conductive layer with a first, e.g. high, work function, the first layer stack being provided on the rear surface of the silicon substrate at the first predetermined locations. The back surface field region is induced by a second layer stack comprising a passivating tunneling layer and a second transparent conductive layer with a second, e.g. low, work function, the second layer stack being provided on the rear surface of the silicon substrate at the second predetermined locations. Methods are provided for fabricating such back contact photovoltaic cells, wherein the fabrication methods can be performed at temperatures not exceeding 600°C.
Patent Publication Number: EP3329520
Year filing: 2021
Year approval: 2021
Year publication: 2021
Status: Assigned
Technology domains: Semiconductors
Validated for IOF-key: Yes
Attributed to: Associatie KULeuven