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Publication

Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistors

Journal Contribution - Journal Article

Journal: Solid-State Electronics

ISSN: 0038-1101

Volume: 195

WoS Id: 000827395800002
DOI: https://doi.org/10.1016/j.sse.2022.108406
Institutional Repository URL: https://lirias.kuleuven.be/3896536

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