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Project

Radiation tolerant CMOS imagers

CMOS image sensors are widespread these days. But the limited radiation tolerance of image sensors remains a problem for the use of these sensors in particle physics, nuclear energy or space applications This Ph.D. project targets to substantially improve the performance of pixels and image sensor readout circuits operated in environments with a high dose rate and a high total accumulated dose of ionizing radiation. Sources of performance degradation due to radiation will be investigated, experimentally, theoretically and through simulations. Techniques to mitigate effects of radiation on the pixel and readout circuits by means of design or technology changes will be proposed and demonstrated. This work involves pixel design and layout, TCAD and circuit simulations of pixels, development of pixel test structures and lab characterization of radiation tolerant pixels before, during and after radiation.

Date:25 Jan 2022 →  Today
Keywords:CMOS Imagers, Radiation Hardening, High Dose, TID
Disciplines:Computer-aided design, Photonics, light and lighting, Electronic circuit and system reliability, Semiconductor devices, nanoelectronics and technology, Nanomaterials, Photodetectors, optical sensors and solar cells
Project type:PhD project