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Project

Diamond-based junction field-effect transistor for extreme power applications (R-12545)

This research project brings together the fields of synthesis and characterization of doped diamond together with the fabrication of devices adapted for high-power electronics. We aim to (i) investigate B- and P-doped diamond films grown on diamond substrates with different crystallographic orientations in order to reduce the defect density in the grown layers, and (ii) to utilize these diamond films in fabricating and characterizing junction-gate field-effect transistors (JFETs). The prototypes are based on a stacked structure composed of B- and P-doped diamond films. First, the laterally grown P-doped diamond layers will be characterized with respect to their defects and electrical properties, which later will be correlated with the performance of the JFETs. Second, various fabrication techniques will be implemented to achieve the proposed JFET architecture. Finally, charge transport mechanisms and properties of the devices will be studied to evidence their outstanding performance.
Date:1 Jan 2022 →  31 Dec 2023
Keywords:chemical vapour deposition, Diamond, doping, junction-gate field-effect transistor
Disciplines:Semiconductors and semimetals, Semiconductor materials not elsewhere classified